Optical modes within III-nitride multiple quantum well microdisk cavities
Identifieur interne : 016111 ( Main/Repository ); précédent : 016110; suivant : 016112Optical modes within III-nitride multiple quantum well microdisk cavities
Auteurs : RBID : Pascal:98-0187084Descripteurs français
- Pascal (Inist)
- 4260D, 4255S, 7866F, 4255P, 4260B, 8530V, 8105E, 8165C, 7820C, Etude expérimentale, Laser semiconducteur, Gallium nitrure, Aluminium nitrure, Cavité laser, Epitaxie jet moléculaire, Dépôt chimique phase vapeur, Mode optique, Gallium composé, Aluminium composé, Indium composé, Semiconducteur III-V, Semiconducteur bande interdite large, Superréseau semiconducteur, Laser puits quantique, Résonateur cavité laser, Mode laser, Pompage optique, Gravure pulvérisation, Indice réfraction.
English descriptors
- KwdEn :
- Aluminium compounds, Aluminium nitrides, CVD, Experimental study, Gallium compounds, Gallium nitrides, III-V semiconductors, Indium compounds, Laser cavities, Laser cavity resonators, Laser modes, Molecular beam epitaxy, Optical modes, Optical pumping, Quantum well lasers, Refractive index, Semiconductor lasers, Semiconductor superlattices, Sputter etching, Wide band gap semiconductors.
Abstract
Optical resonance modes have been observed in optically pumped microdisk cavities fabricated from 50 Å/50 Å GaN/AlxGa1-xN(x∼0.07) and 45 Å/45 Å InxGa1-xN/GaN(x∼0.15) multiple quantum well structures. Microdisks, approximately 9 μm in diameter and regularly spaced every 50 μm, were formed by an ion beam etch process. Individual disks were pumped at 300 and 10 K with 290 nm laser pulses focused to a spot size much smaller than the disk diameter. Optical modes corresponding to (i) the radial mode type with a spacing of 49-51 meV (both TE and TM) and (ii) the Whispering Gallery mode with a spacing of 15-16 meV were observed in the GaN microdisk cavities. The spacings of these modes are consistent with those expected for modes within a resonant cavity of cylindrical symmetry, refractive index, and dimensions of the microdisks under investigation. The GaN-based microdisk cavity is compared with its GaAs counterpart and implications regarding future GaN-based microdisk lasers are discussed. © 1998 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Optical modes within III-nitride multiple quantum well microdisk cavities</title><author><name sortKey="Mair, R A" uniqKey="Mair R">R. A. Mair</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Zeng, K C" uniqKey="Zeng K">K. C. Zeng</name></author><author><name sortKey="Lin, J Y" uniqKey="Lin J">J. Y. Lin</name></author><author><name sortKey="Jiang, H X" uniqKey="Jiang H">H. X. Jiang</name></author><author><name sortKey="Zhang, B" uniqKey="Zhang B">B. Zhang</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Peking University, Beijing 100871, Peoples Republic of China</s1><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Department of Physics, Peking University, Beijing 100871</wicri:regionArea><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Dai, L" uniqKey="Dai L">L. Dai</name></author><author><name sortKey="Botchkarev, A" uniqKey="Botchkarev A">A. Botchkarev</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Department of Electrical Engineering, Virginia Commonwealth University, Richmond, Virginia 23284-3072</s1><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Virginie</region></placeName><wicri:cityArea>Department of Electrical Engineering, Virginia Commonwealth University, Richmond</wicri:cityArea></affiliation></author><author><name sortKey="Kim, W" uniqKey="Kim W">W. Kim</name></author><author><name sortKey="Morkoc, H" uniqKey="Morkoc H">H. Morkoc</name></author><author><name sortKey="Khan, M A" uniqKey="Khan M">M. A. Khan</name><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>Department of Electrical and Computing Engineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical and Computing Engineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">98-0187084</idno><date when="1998-03-30">1998-03-30</date><idno type="stanalyst">PASCAL 98-0187084 AIP</idno><idno type="RBID">Pascal:98-0187084</idno><idno type="wicri:Area/Main/Corpus">017477</idno><idno type="wicri:Area/Main/Repository">016111</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Aluminium nitrides</term><term>CVD</term><term>Experimental study</term><term>Gallium compounds</term><term>Gallium nitrides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Laser cavities</term><term>Laser cavity resonators</term><term>Laser modes</term><term>Molecular beam epitaxy</term><term>Optical modes</term><term>Optical pumping</term><term>Quantum well lasers</term><term>Refractive index</term><term>Semiconductor lasers</term><term>Semiconductor superlattices</term><term>Sputter etching</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>4260D</term><term>4255S</term><term>7866F</term><term>4255P</term><term>4260B</term><term>8530V</term><term>8105E</term><term>8165C</term><term>7820C</term><term>Etude expérimentale</term><term>Laser semiconducteur</term><term>Gallium nitrure</term><term>Aluminium nitrure</term><term>Cavité laser</term><term>Epitaxie jet moléculaire</term><term>Dépôt chimique phase vapeur</term><term>Mode optique</term><term>Gallium composé</term><term>Aluminium composé</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Superréseau semiconducteur</term><term>Laser puits quantique</term><term>Résonateur cavité laser</term><term>Mode laser</term><term>Pompage optique</term><term>Gravure pulvérisation</term><term>Indice réfraction</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Optical resonance modes have been observed in optically pumped microdisk cavities fabricated from 50 Å/50 Å GaN/Al<sub>x</sub>Ga<sub>1-x</sub>N(x∼0.07) and 45 Å/45 Å In<sub>x</sub>Ga<sub>1-x</sub>N/GaN(x∼0.15) multiple quantum well structures. Microdisks, approximately 9 μm in diameter and regularly spaced every 50 μm, were formed by an ion beam etch process. Individual disks were pumped at 300 and 10 K with 290 nm laser pulses focused to a spot size much smaller than the disk diameter. Optical modes corresponding to (i) the radial mode type with a spacing of 49-51 meV (both TE and TM) and (ii) the Whispering Gallery mode with a spacing of 15-16 meV were observed in the GaN microdisk cavities. The spacings of these modes are consistent with those expected for modes within a resonant cavity of cylindrical symmetry, refractive index, and dimensions of the microdisks under investigation. The GaN-based microdisk cavity is compared with its GaAs counterpart and implications regarding future GaN-based microdisk lasers are discussed. © 1998 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>72</s2></fA05><fA06><s2>13</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Optical modes within III-nitride multiple quantum well microdisk cavities</s1></fA08><fA11 i1="01" i2="1"><s1>MAIR (R. A.)</s1></fA11><fA11 i1="02" i2="1"><s1>ZENG (K. C.)</s1></fA11><fA11 i1="03" i2="1"><s1>LIN (J. Y.)</s1></fA11><fA11 i1="04" i2="1"><s1>JIANG (H. X.)</s1></fA11><fA11 i1="05" i2="1"><s1>ZHANG (B.)</s1></fA11><fA11 i1="06" i2="1"><s1>DAI (L.)</s1></fA11><fA11 i1="07" i2="1"><s1>BOTCHKAREV (A.)</s1></fA11><fA11 i1="08" i2="1"><s1>KIM (W.)</s1></fA11><fA11 i1="09" i2="1"><s1>MORKOC (H.)</s1></fA11><fA11 i1="10" i2="1"><s1>KHAN (M. A.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics, Peking University, Beijing 100871, Peoples Republic of China</s1><sZ>5 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Electrical Engineering, Virginia Commonwealth University, Richmond, Virginia 23284-3072</s1><sZ>7 aut.</sZ></fA14><fA14 i1="04"><s1>Department of Electrical and Computing Engineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>10 aut.</sZ></fA14><fA20><s1>1530-1532</s1></fA20><fA21><s1>1998-03-30</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 1998 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>98-0187084</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Optical resonance modes have been observed in optically pumped microdisk cavities fabricated from 50 Å/50 Å GaN/Al<sub>x</sub>Ga<sub>1-x</sub>N(x∼0.07) and 45 Å/45 Å In<sub>x</sub>Ga<sub>1-x</sub>N/GaN(x∼0.15) multiple quantum well structures. Microdisks, approximately 9 μm in diameter and regularly spaced every 50 μm, were formed by an ion beam etch process. Individual disks were pumped at 300 and 10 K with 290 nm laser pulses focused to a spot size much smaller than the disk diameter. Optical modes corresponding to (i) the radial mode type with a spacing of 49-51 meV (both TE and TM) and (ii) the Whispering Gallery mode with a spacing of 15-16 meV were observed in the GaN microdisk cavities. The spacings of these modes are consistent with those expected for modes within a resonant cavity of cylindrical symmetry, refractive index, and dimensions of the microdisks under investigation. 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